FDG314P Overview
This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook puters and cellular phones.
FDG314P Key Features
- 0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V
- Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V). Gate-Source Zener for ESD r