FDG314P - Digital FET/ P-Channel

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Fairchild Semiconductor

Part number	FDG314P
Manufacturer	Fairchild Semiconductor
File Size	84.38 KB
Description	Digital FET/ P-Channel
Datasheet	FDG314P Datasheet
Additional preview pages of the FDG314P datasheet.

This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize onstate resistance at low gate drive conditions.

-0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) 6 kV Human Body Model). Compact industry standard SC70-6 surface mount package.

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Published: Mar 30, 2005 |