FDG316P Datasheet | Fairchild Semiconductor

December 2001 P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - -1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V. - - - Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). pact industry standard SC70-6 surface mount...