Datasheet Summary
February 2000
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Features
- 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
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- Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). pact industry standard SC70-6 surface mount package.
Applications
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- Load switch Power management...