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FDG311N

Manufacturer: Fairchild (now onsemi)
FDG311N datasheet preview

Datasheet Details

Part number FDG311N
Datasheet FDG311N_FairchildSemiconductor.pdf
File Size 89.54 KB
Manufacturer Fairchild (now onsemi)
Description N-Channel 2.5V Specified PowerTrench MOSFET
FDG311N page 2 FDG311N page 3

FDG311N Overview

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

FDG311N Key Features

  • Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). pact industry standard SC70
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