FDG315N Datasheet | Fairchild Semiconductor

July 2000 N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V. - - - Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). pact industry standard SC70-6 surface mount...