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FDG315N - N-Channel Logic Level PowerTrench MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V.
  • Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V. • • • Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.