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FDG312P Datasheet P-channel 2.5v Specified Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™.

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications.

Key Features

  • -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.
  • Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.

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Similar Datasheet

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