| Part Number | FDG312P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | Features This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charg. This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. App. |
FDG312P Datasheet PDF
The FDG312P is a P-Channel MOSFET.
| Part Number | FDG312P Datasheet |
|---|---|
| Description | P-Channel 2.5V Specified PowerTrench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge fo.
* -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V. * * Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications * Load switch * Battery protection * Power man. |