FDG327N Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
FDG327N Key Features
- 1.5 A, 20 V
- RDS(ON) = 90 mW @ VGS = 4.5 V
- RDS(ON) = 100 mW @ VGS = 2.5 V
- RDS(ON) = 140 mW @ VGS = 1.8 V
- Fast Switching Speed
- Low Gate Charge (4.5 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Devices are Pb-Free and are RoHS pliant