FDG327N - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDG327N
Manufacturer	ON Semiconductor
File Size	310.36 KB
Description	N-Channel MOSFET
Datasheet	FDG327N-ONSemiconductor.pdf

FDG327N Product details

Description

This N Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

Features

1.5 A, 20 V.
RDS(ON) = 90 mW @ VGS = 4.5 V.
RDS(ON) = 100 mW @ VGS = 2.5 V.
RDS(ON) = 140 mW @ VGS = 1.8 V.
Fast Switching Speed.
Low Gate Charge (4.5 nC Typical).
High Performance Trench Technology for Extremely Low RDS(ON).
High Power and Current Handling Capability.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 24, 2023 |