FDG327N
FDG327N is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
- 1.5 A, 20 V
- RDS(ON) = 90 m W @ VGS = 4.5 V
- RDS(ON) = 100 m W @ VGS = 2.5 V
- RDS(ON) = 140 m W @ VGS = 1.8 V
- Fast Switching Speed
- Low Gate Charge (4.5 n C Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Devices are Pb- Free and are Ro HS pliant
Applications
- DC/DC Converter
- Load Switch
- Power Management
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±8
Drain Current
Continuous
(Note 1a)
Pulsed
Power Dissipation for
(Note 1a)
Single Operation
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be...
