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FDG327N - N-Channel MOSFET

General Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • 1.5 A, 20 V.
  • RDS(ON) = 90 mW @ VGS = 4.5 V.
  • RDS(ON) = 100 mW @ VGS = 2.5 V.
  • RDS(ON) = 140 mW @ VGS = 1.8 V.
  • Fast Switching Speed.
  • Low Gate Charge (4.5 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDG327N
Manufacturer onsemi
File Size 310.36 KB
Description N-Channel MOSFET
Datasheet download datasheet FDG327N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET– N-Channel, POWERTRENCH) 20 V FDG327N General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features • 1.5 A, 20 V ♦ RDS(ON) = 90 mW @ VGS = 4.5 V ♦ RDS(ON) = 100 mW @ VGS = 2.5 V ♦ RDS(ON) = 140 mW @ VGS = 1.8 V • Fast Switching Speed • Low Gate Charge (4.