FDG327N
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V
- Fast switching speed
- Low gate charge (4.5 nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- DC/DC converter
