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FDG329N Datasheet 20v N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDG329N October 2001 FDG329N 20V N-Channel PowerTrench® MOSFET General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

Key Features

  • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V.
  • Fast switching speed.
  • Low gate charge (3.3 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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