Datasheet4U Logo Datasheet4U.com

FDG328P - P-Channel 2.5V Specified PowerTrench MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

12V).

Key Features

  • 1.5 A,.
  • 20 V. RDS(ON) = 0.145 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.210 Ω @ VGS =.
  • 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDG328P P-Channel MOSFET ON Semiconductor
FDG327N N-Channel MOSFET ON Semiconductor
FDG327NZ 20V N-Channel PowerTrench MOSFET ON Semiconductor
FDG312P P-Channel MOSFET ON Semiconductor
FDG313N N-Channel Digital FET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDG326P P-Channel 1.8V Specified PowerTrench MOSFET
FDG327N 20V N-Channel PowerTrench MOSFET
FDG327NZ MOSFET
FDG329N 20V N-Channel PowerTrench MOSFET
FDG311N N-Channel 2.5V Specified PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Features • • • • –1.5 A, –20 V. RDS(ON) = 0.145 Ω @ VGS = –4.5 V RDS(ON) = 0.210 Ω @ VGS = –2.