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FDG326P - P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Key Features

  • 1.5 A,.
  • 20 V. RDS(ON) = 140 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 180 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 250 mΩ @ VGS =.
  • 1.8 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.