FDG326P
FDG326P is manufactured by Fairchild Semiconductor.
January 2001
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- - 1.5 A,
- 20 V. RDS(ON) = 140 mΩ @ VGS =
- 4.5 V RDS(ON) = 180 mΩ @ VGS =
- 2.5 V RDS(ON) = 250 mΩ @ VGS =
- 1.8 V
Applications
- Battery management
- Load switch
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount...
