Datasheet Summary
MOSFET- Specified, P-Channel, POWERTRENCH)
2.5 V
General Description This P- Channel 2.5 V specified MOSFET is produced in a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V
- 12 V).
Features
- - 1.5 A,
- 20 V
- RDS(ON) = 0.145 W @ VGS =
- 4.5 V
- RDS(ON) = 0.210 W @ VGS =
- 2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70- 6 Surface Mount Package
- These Devices are Pb- Free and are RoHS pliant
Applications
- Load Switch
- Power Management
- DC/DC...
