FDG6332C - Dual-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDG6332C
Manufacturer	ON Semiconductor
File Size	279.21 KB
Description	Dual-Channel MOSFET
Datasheet	FDG6332C Datasheet
Additional preview pages of the FDG6332C datasheet.

Product details

Description

The N & P Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain superior switching performance. 8 and SSOP 6 packages are impractical.

Features

Q1 0.7 A, 20 V  RDS(ON) =300 mW @ VGS = 4.5 V  RDS(ON) = 400 mW @ VGS = 2.5 V.
Q2.
0.6 A,.
20 V  RDS(ON) = 420 mW @ VGS =.
4.5 V  RDS(ON) = 630 mW @ VGS =.
2.5 V.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(ON).
SC70.
6 Package: Small Footprint (51% Smaller than SSOT.
6); Low Profile (1 mm Thick).
ESD Protection Level: HBM >75 V, MM >25 V, CDM >1.5 kV.
These Devices are Pb.

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Published: Dec 24, 2023 |