Datasheet Summary
September 2003
20V N & P-Channel PowerTrench® MOSFETs
General Description
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Features
- Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V
- Q2
- 0.6 A,
- 20V. RDS(ON) = 420 mΩ @ VGS =
- 4.5 V RDS(ON) = 630 mΩ @ VGS =
- 2.5 V
- Low gate charge
- High...
