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FDG6332C - 20V N&P-Channel MOSFET

Datasheet Summary

Description

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V.
  • Q2.
  • 0.6 A,.
  • 20V. RDS(ON) = 420 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 630 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick).

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Datasheet Details

Part number FDG6332C
Manufacturer Fairchild Semiconductor
File Size 93.07 KB
Description 20V N&P-Channel MOSFET
Datasheet download datasheet FDG6332C Datasheet
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Full PDF Text Transcription

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FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. Features • Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.
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