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FDG6332C Datasheet Dual-Channel MOSFET

Manufacturer: onsemi

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Datasheet Details

Part number FDG6332C
Manufacturer onsemi
File Size 279.21 KB
Description Dual-Channel MOSFET
Datasheet download datasheet FDG6332C Datasheet

General Description

The N & P−Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP−8 and SSOP−6 packages are impractical.

Overview

DATA SHEET www.onsemi.com MOSFET – N & P-Channel, POWERTRENCH) 20.

Key Features

  • Q1 0.7 A, 20 V  RDS(ON) =300 mW @ VGS = 4.5 V  RDS(ON) = 400 mW @ VGS = 2.5 V.
  • Q2.
  • 0.6 A,.
  • 20 V  RDS(ON) = 420 mW @ VGS =.
  • 4.5 V  RDS(ON) = 630 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SC70.
  • 6 Package: Small Footprint (51% Smaller than SSOT.
  • 6); Low Profile (1 mm Thick).
  • ESD Protection Level: HBM >75 V, MM >25 V, CDM >1.5 kV.
  • These Devices are Pb.

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