Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- N & P-Channel, POWERTRENCH)
20 V
General Description The N & P- Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP- 8 and SSOP- 6 packages are impractical.
Features
- Q1 0.7 A, 20 V
RDS(ON) =300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V
- Q2
- 0.6 A,
- 20 V
RDS(ON) = 420 mW @ VGS =
- 4.5 V RDS(ON) = 630 mW @ VGS =
- 2.5 V
- Low Gate Charge
- High...
