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DATA SHEET www.onsemi.com
MOSFET – N & P-Channel, POWERTRENCH)
20 V
FDG6332C
General Description The N & P−Channel MOSFETs are produced using onsemi
advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP−8 and SSOP−6 packages are impractical.
Features
Q1 0.7 A, 20 V
RDS(ON) =300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V
Q2 −0.6 A, −20 V
RDS(ON) = 420 mW @ VGS = −4.5 V RDS(ON) = 630 mW @ VGS = −2.
FDG6332C Datasheet
