Datasheet4U Logo Datasheet4U.com

FDG8850NZ Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, POWERTRENCH® 30 V, 0.75 A, 0.

General Description

This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Key Features

  • Max RDS(on) = 0.4 W at VGS = 4.5 V, ID = 0.75 A.
  • Max RDS(on) = 0.5 W at VGS = 2.7 V, ID = 0.67 A.
  • Very Low Level Gate Drive Requirements Allowing Operation in 3 V Circuits (VGS(th) < 1.5 V).
  • Very Small Package Outline SC.
  • 70 6 Lead.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant MOSFET.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDG8850NZ MOSFET Fairchild Semiconductor

More Datasheets from onsemi

Part Number Description
FDG8842CZ MOSFET
FDG1024NZ Dual N-Channel MOSFET
FDG312P P-Channel MOSFET
FDG313N N-Channel Digital FET
FDG315N N-Channel MOSFET
FDG316P P-Channel MOSFET
FDG327N N-Channel MOSFET
FDG327NZ 20V N-Channel PowerTrench MOSFET
FDG328P P-Channel MOSFET
FDG6301N Dual N-Channel Digital FET

FDG8850NZ Distributor