FDI045N10A Datasheet - ON Semiconductor

N-Channel MOSFET

* RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A

* Fast Switching Speed

* Low Gate Charge, QG = 54 nC (Typ.)

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* This Device is Pb

* Free

FDI045N10A

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N-channel mosfet.

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FDI045N10A N-Channel MOSFET ON Semiconductor

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