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MOSFET - N-Channel, POWERTRENCH)
100 V, 164 A, 4.5 mW
FDP045N10A / FDI045N10A
Description This N−Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
Features
RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A Fast Switching Speed Low Gate Charge, QG = 54 nC (Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability This Device is Pb−Free and is RoHS Compliant
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter
DATA SHEET www.onsemi.
FDI045N10A Datasheet
