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FDI045N10A 100V 164A N-Channel MOSFET

FDI045N10A Description

MOSFET - N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW FDP045N10A / FDI045N10A .
This N. Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on. state resistanc.

FDI045N10A Features

* RDS(on) = 3.8 mW ( Typ. ) @ VGS = 10 V, ID = 100 A
* Fast Switching Speed
* Low Gate Charge, QG = 54 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* This Device is Pb
* Free and is RoHS Compliant A

FDI045N10A Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter DATA SHEET www. onsemi. com D G S TO
* 220 CASE 221A
* 09 I2PAK CASE 418AV MARKING DIAGRAM $Y&Z&3&K FDP 045N

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100V 164A N-Channel MOSFET ON Semiconductor
ON Semiconductor FDI045N10A-like datasheet