FDI045N10A Datasheet | Fairchild Semiconductor

FDP045N10A / FDI045N10A - N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Features - RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A - Fast Switching Speed - Low Gate Charge, QG = 54 nC (Typ.) - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - RoHS pliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications - Synchronous Rectification for ATX / Server / Tele PSU - Battery...