FDI045N10A Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Micro Solar Inverter D GDS TO-220 GDS I2-PAK G S MOSFET Maximum Ratings...
FDI045N10A Key Features
- RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
- Fast Switching Speed
- Low Gate Charge, QG = 54 nC (Typ.)
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
FDI045N10A Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit