FDI045N10A Datasheet

The FDI045N10A is a 100V 164A N-Channel MOSFET.

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Part NumberFDI045N10A
Manufactureronsemi
Overview This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features  RDS.
* RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A
* Fast Switching Speed
* Low Gate Charge, QG = 54 nC (Typ.)
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* This Device is Pb
*Free and is RoHS Compliant Applications
* Synchronous Rectif.
Part NumberFDI045N10A
DescriptionN-Channel PowerTrench MOSFET
ManufacturerFairchild Semiconductor
Overview This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performan.
* RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
* Fast Switching Speed
* Low Gate Charge, QG = 54 nC (Typ.)
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild .