FDI045N10A Description
This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
FDI045N10A Key Features
- RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A
- Fast Switching Speed
- Low Gate Charge, QG = 54 nC (Typ.)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and is RoHS pliant