FDI045N10A - 100V 164A N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Key Features

RDS(on) = 3.8 mW ( Typ. ) @ VGS = 10 V, ID = 100 A.
Fast Switching Speed.
Low Gate Charge, QG = 54 nC (Typ. ).
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
This Device is Pb.
Free and is RoHS Compliant.

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FDI045N10A 100v 164a n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDI045N10A
Manufacturer	onsemi
File Size	596.47 KB
Description	100V 164A N-Channel MOSFET
Datasheet	FDI045N10A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW FDP045N10A / FDI045N10A Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features  RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A  Fast Switching Speed  Low Gate Charge, QG = 54 nC (Typ.)  High Performance Trench Technology for Extremely Low RDS(on)  High Power and Current Handling Capability  This Device is Pb−Free and is RoHS Compliant Applications  Synchronous Rectification for ATX / Server / Telecom PSU  Battery Protection Circuit  Motor Drives and Uninterruptible Power Supplies  Micro Solar Inverter DATA SHEET www.onsemi.