Datasheet Summary
MOSFET
- Dual N-Channel, POWERTRENCH)
20 V, 5.0 A, 54 mW
General Description This is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra- portable applications. It Features two independent N- Channel MOSFETs with low on- state resistance for minimum conduction losses.
The MicroFET t 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- Max rDS(on) = 54 mW at VGS = 4.5 V, ID = 5.0 A
- Max rDS(on) = 66 mW at VGS = 2.5 V, ID = 4.2 A
- Max rDS(on) = 82 mW at VGS = 1.8 V, ID = 2.3 A
- Max rDS(on) = 114 mW at VGS = 1.5 V, ID = 2.0 A
- HBM ESD...
