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FDMA1024NZ - Dual N-Channel PowerTrench MOSFET

General Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications.

Key Features

  • Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A.
  • Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A.
  • Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A.
  • Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMA1024NZ Dual N-Channel Power Trench® MOSFET May 2009 FDMA1024NZ www.datasheet4u.com Dual N-Channel PowerTrench® MOSFET 20 V, 5.0 A, 54 mΩ Features „ Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A „ Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A „ Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A „ Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ HBM ESD protection level = 1.