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FDMA1028NZ - Dual N-Channel PowerTrench MOSFET

General Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications.

Key Features

  • two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FDMA1028NZ Dual N-Channel PowerTrench® MOSFET May 2006 FDMA1028NZ Dual N-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 D2 • RoHS Compliant Features • 3.7 A, 20V. RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V • Low profile – 0.