FDMA1023PZ Datasheet | Fairchild Semiconductor

Features Dual P-Channel Power Trench® MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical mon source configuration, bi-directional current flow is possible. The Micro FET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. - Max r DS(on) = 72mΩ at VGS = - 4.5V, ID = - 3.7A - Max r DS(on) = 95mΩ at VGS = - 2.5V, ID = - 3.2A - Max r DS(on) = 130mΩ at VGS = - 1.8V, ID = - 2.0A - Max r DS(on) = 195mΩ at VGS = - 1.5V, ID = - 1.0A - Low profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm - Ro HS pliant Pin 1 S1 G1 D2 S1 D1 1 6 D1 D2 .. G1 5 4 G2 D2 3 Micro FET 2X2 D1 G2 S2 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings - 20 ±8 - 3.7 - 6 1.5 0.7 - 55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 69 151 °C/W Package Marking and Ordering Information Device Marking 023 Device FDMA1023PZ Package Micro FET 2X2 Reel Size 7” Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMA1023PZ...