FDMA1023PZ Datasheet | onsemi

Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- portable applications. It features two independent P- Channel MOSFETs with low on- state resistance for minimum conduction losses. When connected in the typical mon source configuration, bi- directional current flow is possible. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features - Max RDS(on) = 72 m W at VGS = - 4.5 V, ID = - 3.7 A - Max RDS(on) = 95 m W at VGS = - 2.5 V, ID = - 3.2 A - Max RDS(on) = 130 m W at VGS = - 1.8 V, ID = - 2.0 A - Max RDS(on) = 195 m W at VGS = - 1.5 V, ID = - 1.0 A - Low Profile - 0.8 mm Maximum - In the New Package Micro FET 2x2 mm - HBM ESD Protection Level > 2 k V (Note 3) - Free from Halogenated pounds and Antimony Oxides - This Device is Pb- Free, Halide Free and is Ro HS pliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Note 1a) - Pulsed -...