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FDMA1024NZ - Dual N-Channel MOSFET

General Description

This is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra

portable applications.

Key Features

  • two independent N.
  • Channel MOSFETs with low on.
  • state resistance for minimum conduction losses. The MicroFET t 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode.

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Datasheet Details

Part number FDMA1024NZ
Manufacturer onsemi
File Size 250.44 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMA1024NZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual N-Channel, POWERTRENCH) 20 V, 5.0 A, 54 mW FDMA1024NZ General Description This is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra−portable applications. It features two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFET t 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features • Max rDS(on) = 54 mW at VGS = 4.5 V, ID = 5.0 A • Max rDS(on) = 66 mW at VGS = 2.5 V, ID = 4.2 A • Max rDS(on) = 82 mW at VGS = 1.8 V, ID = 2.3 A • Max rDS(on) = 114 mW at VGS = 1.5 V, ID = 2.0 A • HBM ESD Protection Level = 1.6 kV (Note 3) • Low Profile − 0.