FDMA1028NZ
Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.
Key Features
- 3.7 A, 20 V RDS(on) = 68 mW at VGS = 4.5 V RDS(on) = 86 mW at VGS = 2.5 V
- 0.8 mm Maximum
- In the New Package MicroFET 2x2 mm
- HBM ESD Protection Level > 2 kV (Note
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb-Free, Halide Free and is RoHS compliant
