Datasheet4U Logo Datasheet4U.com

FDMA1027P - Dual P-Channel PowerTrench MOSFET

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Key Features

  • two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMA1027P Dual P-Channel MOSFET ON Semiconductor
FDMA1023PZ Dual P-Channel MOSFET ON Semiconductor
FDMA1024NZ Dual N-Channel MOSFET ON Semiconductor
FDMA1028NZ Dual N-Channel Power MOSFET ON Semiconductor
FDMA1029PZ Dual P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMA1027PT Dual P-Channel MOSFET
FDMA1023PZ Dual P-Channel PowerTrench MOSFET
FDMA1024NZ Dual N-Channel PowerTrench MOSFET
FDMA1025P Dual P-Channel MOSFET
FDMA1028NZ Dual N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMA1027P Dual P-Channel PowerTrench® MOSFET October 2005 FDMA1027P Dual P-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 G1 D2 D2 S1 Features • –3.0 A, –20V. RDS(ON) = 120 mΩ @ VGS = –4.5V RDS(ON) = 160 mΩ @ VGS = –2.5V RDS(ON) = 240 mΩ @ VGS = –1.8V • Low profile – 0.