Datasheet Summary
FDMA3028N Dual N-Channel PowerTrench® MOSFET
Dual N-Channel PowerTrench® MOSFET
30 V, 3.8 A, 68 mΩ
Features
- Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
- Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
- Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
- Low profile
- 0. 8 mm maximum
- in the new package
MicroFET 2x2 mm
- RoHS pliant
General Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It Features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal...
