Datasheet Summary
MOSFET
- Single, N-Channel, 2.5 V, Specified, POWERTRENCH)
20 V, 5.7 A, 30 mW
General Description This Single N- Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special MicroFETt leadframe.
Features
- RDS(on) = 30 mW @ VGS = 4.5 V, ID = 5.7 A
- RDS(on) = 40 mW @ VGS = 2.5 V, ID = 5.0 A
- Low Profile
- 0.8 mm Maximum- in the New Package MicroFET
2x2 mm
- HBM ESD Protection Level > 2.5 kV Typical (Note 3)
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- Li- lon Battery Pack
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise...
