Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Single, P-Channel, POWERTRENCH)
-20 V, -7.8 A, 24 mW
VS1S2
- 20 V rS1S2(on) MAX 24 mW @
- 5 V 25 mW @
- 4.5 V 35 mW @
- 2.5 V 45 mW @
- 1.8 V
IS1S2 MAX
- 7.8 A
General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on- stade resistance.
The MicroFET t 2x2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications.
Features
- Max rDS(on) = 24 mW at VGS =
- 5 V, ID =
- 7.8 A
- Max rDS(on) = 25 mW at VGS =
- 4.5 V, ID =
- 7 A
- Max rDS(on) = 35 mW at VGS =
- 2.5 V, ID =
- 5.5...
