FDMA86108LZ datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 243 mW at VGS = 10 V, ID = 2.2 A
* Max rDS(on) = 366 mW at VGS = 4.5 V, ID = 1.8 A
* Low Profile − 0.8 mm Maximum in the New Package MicroFETt.

Description

This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. Features
* Max rDS(on) = 243 mW at VGS = 10 V, ID = 2.2 .

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