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FDMA86265P Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) -150 V, -1 A, 1.2 W VDS −150 V rDS(on) MAX 1.2 mW @ −10 V 1.

General Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.

Key Features

  • Max rDS(on) = 1.2 mW at VGS =.
  • 10 V, ID =.
  • 1 A.
  • Max rDS(on) = 1.4 mW at VGS =.
  • 6 V, ID =.
  • 0.9 A.
  • Low Profile.
  • 0.8 mm Maximum in the New Package MicroFETt 2x2 mm.
  • Very Low RDS.
  • on Mid Voltage P.
  • channel Silicon Technology Optimised for Low Qg.
  • This Product is Optimised for Fast Switching.

Similar Datasheet

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