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  ON Semiconductor Electronic Components Datasheet  

FDMC0310AS Datasheet

N-Channel MOSFET

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FDMC0310AS
N-Channel PowerTrench® SyncFETTM
30 V, 21 A, 4.4 mΩ
General Description
Features
„ Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A
„ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A
„ Advanced package and silicon combination for low rDS(on) and
high efficiency
„ SyncFETTM Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMC0310AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top
Bottom
Pin 1
S SG
S
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( t Transient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalance Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
33
±20
21
19
100
66
36
2.4
-55 to +150
Units
V
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.4
(Note 1a)
53
°C/W
Device Marking
FDMC0310AS
Device
FDMC0310AS
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Semiconductor Components Industries, LLC.
August-2017, Rev.3
Publication Order Number:
FDMC0310AS/D


  ON Semiconductor Electronic Components Datasheet  

FDMC0310AS Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
30
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
V
26
mV/°C
500
μA
100
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 1 mA
1.2
1.6
3.0
V
ID = 10 mA, referenced to 25 °C
-5
mV/°C
VGS = 10 V, ID = 19 A
VGS = 4.5 V, ID = 17.5 A
VGS = 10 V, ID = 19 A,
TJ = 125 °C
VDS = 5 V, ID = 19 A
3.8
4.4
4.5
5.2
mΩ
4.5
5.8
106
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2380 3165 pF
885 1175
pF
100
150
pF
0.1
0.7
2.5
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 19 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 19 A
11
20
ns
5
10
ns
30
48
ns
4
10
ns
37
52
nC
18
25
nC
6
nC
6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 19 A
(Note 2)
(Note 2)
0.6
0.8
V
0.8
1.2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 19 A, di/dt = 300 A/μs
29
47
ns
33
53
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% tested at L= 3 mH, IAS = 10.2 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
www.onsemi.com
2


Part Number FDMC0310AS
Description N-Channel MOSFET
Maker ON Semiconductor
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FDMC0310AS Datasheet PDF






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