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FDMC0310AS - N-Channel MOSFET

Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

  • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A.
  • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A.
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDMC0310AS

Datasheet Details

Part number FDMC0310AS
Manufacturer ON Semiconductor
File Size 455.92 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC0310AS Datasheet
Additional preview pages of the FDMC0310AS datasheet.

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Full PDF Text Transcription

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SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 4.4 mW FDMC0310AS, FDMC0310AS-F127 General Description The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Features • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.
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