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FDMC0310AS-F127 - N-Channel MOSFET

Download the FDMC0310AS-F127 datasheet PDF. This datasheet also covers the FDMC0310AS variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

  • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A.
  • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A.
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMC0310AS-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 4.4 mW FDMC0310AS, FDMC0310AS-F127 General Description The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Features • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.