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FDMC007N30D - Dual N-Channel MOSFET

General Description

This device includes two specialized N

a dual Power33 (3mm × 3mm MLP) package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N.
  • Channel.
  • Max RDS(on) = 11.6 mW at VGS = 10 V, ID = 10 A.
  • Max RDS(on) = 13.3 mW at VGS = 4.5 V, ID = 9 A Q1: N.
  • Channel.
  • Max RDS(on) = 6.4 mW at VGS = 10 V, ID = 16 A.
  • Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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MOSFET – Dual, N-Channel, POWERTRENCH) Q1: 30 V, 11.6 mW; Q2: 30 V, 6.4 mW FDMC007N30D General Description This device includes two specialized N−Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max RDS(on) = 11.6 mW at VGS = 10 V, ID = 10 A • Max RDS(on) = 13.3 mW at VGS = 4.5 V, ID = 9 A Q1: N−Channel • Max RDS(on) = 6.4 mW at VGS = 10 V, ID = 16 A • Max RDS(on) = 7.0 mW at VGS = 4.