Datasheet Summary
MOSFET
- Dual, N-Channel, POWERTRENCH)
Q1: 30 V, 11.6 mW; Q2: 30 V, 6.4 mW
General Description This device includes two specialized N- Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
Features
Q1: N- Channel
- Max RDS(on) = 11.6 mW at VGS = 10 V, ID = 10 A
- Max RDS(on) = 13.3 mW at VGS = 4.5 V, ID = 9 A
Q1: N- Channel
- Max RDS(on) = 6.4 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A
- RoHS pliant
Applications
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