Datasheet4U Logo Datasheet4U.com

FDMC010N08LC - N-Channel MOSFET

General Description

ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology.

This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 16 A.
  • Max RDS(on) = 18.4 mW at VGS = 4.5 V, ID = 13 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC0310AS MOSFET Fairchild Semiconductor
FDMC15N06 N-Channel MOSFET Fairchild Semiconductor
FDMC2512SDC N-Channel MOSFET Fairchild Semiconductor
FDMC2514SDC N-Channel Dual Cool PowerTrench SyncFET Fairchild Semiconductor
FDMC2514SDC N-Channel MOSFET VBsemi

Other Datasheets by onsemi

Part Number Description
FDMC010N08C N-Channel MOSFET
FDMC012N03 30V N-Channel MOSFET
FDMC007N08LC N-Channel MOSFET
FDMC007N08LCDC 80V 64A N-Channel MOSFET
FDMC007N30D Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMC010N08LC N‐Channel Shielded Gate POWERTRENCH) MOSFET 80 V, 50 A, 10.9 mW General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 16 A • Max RDS(on) = 18.4 mW at VGS = 4.