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FDMC007N08LCDC - 80V 64A N-Channel MOSFET

General Description

advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 6.8 mW at VGS = 10 V, ID = 22 A.
  • Max RDS(on) = 11.1 mW at VGS = 4.5 V, ID = 18 A.
  • 5 V Drive Capable.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 80 V, 64 A, 6.8 mW FDMC007N08LCDC General Description This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 6.8 mW at VGS = 10 V, ID = 22 A • Max RDS(on) = 11.1 mW at VGS = 4.