FDMC007N08LCDC Description
This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMC007N08LCDC Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 6.8 mW at VGS = 10 V, ID = 22 A
- Max RDS(on) = 11.1 mW at VGS = 4.5 V, ID = 18 A
- 5 V Drive Capable
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS