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FDMC008N08C - N-Channel MOSFET

General Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A.
  • Max RDS(on) = 19.3 mW at VGS = 6 V, ID = 10 A.
  • 50% Lower Qrr Than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 80 V, 60 A, 7.8 mW FDMC008N08C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A • Max RDS(on) = 19.