FDMC012N03 - 30V N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

Max RDS(on) = 1.23 mW at VGS = 10 V, ID = 35 A.
Max RDS(on) = 1.46 mW at VGS = 4.5 V, ID = 32 A.
High Performance Technology for Extremely Low RDS(on).
Termination is Lead.
Free.
This Device is Pb.
Free, Halide Free and RoHS Compliant.

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FDMC012N03 30v n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC012N03
Manufacturer	onsemi
File Size	401.99 KB
Description	30V N-Channel MOSFET
Datasheet	FDMC012N03 Datasheet

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MOSFET – N-Channel, POWERTRENCH) 30 V, 1.23 mW FDMC012N03 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 1.23 mW at VGS = 10 V, ID = 35 A • Max RDS(on) = 1.46 mW at VGS = 4.