Datasheet Summary
MOSFET
- Dual N-Channel, POWERTRENCH)
Q1: 30 V, 12 A, 9.0 mW Q2: 30 V, 16 A, 6.4 mW
General Description This device includes two 30 V N- Channel MOSFETs in a dual
Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
Features
Q1: N- Channel
- Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 12 A
- Max rDS(on) = 11.0 mW at VGS = 4.5 V, ID = 11 A
Q2: N- Channel
- Max rDS(on) = 6.4 mW at VGS = 10 V, ID = 16 A
- Max rDS(on) = 7.5 mW at VGS = 4.5 V, ID = 13.5 A
- This Device is Pb- Free and is RoHS pliant
Applications
- puting
- munications
- General Purpose Point of Load
- Notebook System
DATA SHEET .onsemi.
Pin 1 G1 S1 S1 S1 D1 D2
G2 S2...
