Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
30 V, 16.9 A, 5.7 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max RDS(on) = 5.7 mW at VGS = 10 V, ID = 16.9 A
- Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15.0 A
- High Performance Technology for Extremely Low RDS(on)
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC Buck Converters
- Notebook Battery Power Management
- Load Switch in Notebook
MAXIMUM RATINGS (TA =...
