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FDMC8010ET30 - N-Channel MOSFET

Description

This N Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Features

  • Extended TJ Rating to 175°C.
  • Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A.
  • High Performance Technology for Extremely Low rDS(on).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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FDMC8010ET30 MOSFET – N-Channel, POWERTRENCH) 30 V, 174 A, 1.3 mW General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Features • Extended TJ Rating to 175°C • Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 1.8 mW at VGS = 4.
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