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FDMC8010ET30 N-Channel MOSFET

FDMC8010ET30 Description

FDMC8010ET30 MOSFET * N-Channel, POWERTRENCH) 30 V, 174 A, 1.3 mW General .
This N. Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on.

FDMC8010ET30 Features

* Extended TJ Rating to 175°C
* Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A
* High Performance Technology for Extremely Low rDS(on)
* These Devices are Pb

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N-Channel MOSFET ON Semiconductor
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