FDMC8010ET30 Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC8010ET30 Features

* Extended TJ Rating to 175°C

* Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A

* Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A

* High Performance Technology for Extremely Low rDS(on)

* These Devices are Pb

* Free and are RoHS Compliant Applications

FDMC8010ET30 General Description

This N *Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM,.

FDMC8010ET30 Datasheet (573.82 KB)