FDMC8010ET30
Description
This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
Key Features
- Extended TJ Rating to 175°C
- Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A
- Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A
- High Performance Technology for Extremely Low rDS(on)
- These Devices are Pb−Free and are RoHS pliant
Applications
- DC − DC Buck Converters
