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FDMC8010ET30 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Extended TJ rating to 175°C.
  • Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant January 2015 General.

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Full PDF Text Transcription (Reference)

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FDMC8010ET30 N-Channel PowerTrench® MOSFET FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.3 mΩ Features „ Extended TJ rating to 175°C „ Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant January 2015 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.