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FDMC8010ET30 N-Channel PowerTrench® MOSFET
FDMC8010ET30
N-Channel PowerTrench® MOSFET
30 V, 174 A, 1.3 mΩ Features
Extended TJ rating to 175°C
Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
January 2015
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
FDMC8010ET30 Datasheet
