FDMC8010ET30 Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Applications DC - DC Buck Converters Point of Load High Efficiency Load Switch and Low Side...
FDMC8010ET30 Key Features
- Extended TJ rating to 175°C
- Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
