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FDMC8010ET30
MOSFET – N-Channel, POWERTRENCH)
30 V, 174 A, 1.3 mW
General Description This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Features
• Extended TJ Rating to 175°C • Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 1.8 mW at VGS = 4.
FDMC8010ET30 Datasheet
