Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
40 V, 18 A, 26 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 26 mW at VGS = 10 V, ID = 7 A
- Max RDS(on) = 36 mW at VGS = 4.5 V, ID = 6 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- Load Switch
- Motor Bridge Switch
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source...
