FDMC8015L Description
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMC8015L Key Features
- Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant