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FDMC8015L N-Channel PowerTrench® MOSFETTM
FDMC8015L
N-Channel Power Trench® MOSFET
40 V, 18 A, 26 mΩ
October 2013
Features
General Description
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
Load Switch
Motor Bridge Switch
Top 8765
Bottom DD D D
1 234
GS S S MLP 3.3x3.
FDMC8015L Datasheet
