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FDMC8010DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET
August 2016
FDMC8010DC
N-Channel Dual CoolTM 33 PowerTrench® MOSFET
30 V, 157 A, 1.28 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A High Performance Technology for Extremely Low rDS(on) RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMC8010DC Datasheet
