FEATURES
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A High Performance Technology for Extremely Low rDS(on) RoHS Compliant GENERAL DESCRIPTION
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. APPLICATIONS
Load Switch Motor Bridge Switch Synchronous Rectifier DD D D G SS S Pin 1 Top Dual CoolTM 33 Bottom S S S G D D D D MOSFET MAXIMUM RATINGS
TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristic...
Fairchild Semiconductor
