onsemi FDMC8010DC
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.| Part No. | FDMC8010DC |
|---|---|
| Datasheet | FDMC8010DC Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.FEATURES
● DUAL COOL Top Side Cooling PQFN Package● Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A
● Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A
● High Performance Technology for Extremely Low rDS(on)
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Load Switch● Motor Bridge Switch
● Synchronous Rectifier MOSFET
MAXIMUM RATINGS
(TA = 25°C Unless Otherwise Noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Volage (Note 4) ±20 V ID Drain Current −Continuous −Continuous −Continuous −Pulsed TC = 25°C (Note 6) TC = 100°C (Note 6) TA = 25°C (Note 1a) (Note 5) A 157 99 37 788 EAS Single Pulse Avalance Energy (Note 3) 337 mJ PD Power Dissipation TC = 25°C 50 W Power Dissipation TA = 25°C (Note 1a) 3...
