FDMC8015L Overview
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- Max RDS(on) = 26 mW at VGS = 10 V, ID = 7 A
- Max RDS(on) = 36 mW at VGS = 4.5 V, ID = 6 A
- 1 mm Max in Power 33
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS Compliant
