FDMC8015L Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMC8015L Key Features
- Max RDS(on) = 26 mW at VGS = 10 V, ID = 7 A
- Max RDS(on) = 36 mW at VGS = 4.5 V, ID = 6 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant