FDMC8015L - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

Max RDS(on) = 26 mW at VGS = 10 V, ID = 7 A.
Max RDS(on) = 36 mW at VGS = 4.5 V, ID = 6 A.
Low Profile.
1 mm Max in Power 33.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FDMC8015L n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC8015L
Manufacturer	onsemi
File Size	336.43 KB
Description	N-Channel MOSFET
Datasheet	FDMC8015L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 40 V, 18 A, 26 mW FDMC8015L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 26 mW at VGS = 10 V, ID = 7 A • Max RDS(on) = 36 mW at VGS = 4.